Organic photosensitive optoelectronic device
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 07968875 | zh_TW |
| dc.contributor.author | Meng Hsin-Fei | en_US |
| dc.contributor.author | Hong Sheng-Fu | en_US |
| dc.contributor.author | Tseng Hsin-Rong | en_US |
| dc.contributor.author | Chen En-Chen | en_US |
| dc.contributor.author | Chu Chia-Hung | en_US |
| dc.date.accessioned | 2014-12-16T06:14:19Z | |
| dc.date.available | 2014-12-16T06:14:19Z | |
| dc.date.issued | 2011-06-28 | en_US |
| dc.description.abstract | An organic photosensitive optoelectronic device includes an anode, an organic photosensitive layer formed on the anode and having a donor portion and an acceptor portion, a hole blocking layer formed on the organic photosensitive layer so as for the organic photosensitive layer to be sandwiched between the anode and the hole blocking layer, and a cathode formed on the hole blocking layer so as for the hole blocking layer to be sandwiched between the cathode and the organic photosensitive layer. The highest occupied molecular orbitals (HOMO) of the hole blocking layer is at least 0.3 eV higher than that of the donor portion. Therefore, the optoelectronic device efficiently suppresses dark current so as to enhance sensitivity when applied to a detector. | zh_TW |
| dc.identifier.govdoc | H01L029/08 | zh_TW |
| dc.identifier.govdoc | H01L035/24 | zh_TW |
| dc.identifier.govdoc | H01L051/00 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/104659 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | Organic photosensitive optoelectronic device | zh_TW |
| dc.type | Patents | en_US |