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靜態隨機存取記憶體

dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumberI410971zh_TW
dc.contributor.author莊景德en_US
dc.contributor.author楊皓義en_US
dc.contributor.author林志宇en_US
dc.contributor.author楊仕祺en_US
dc.contributor.author杜明賢en_US
dc.contributor.author黃威en_US
dc.contributor.author周世傑en_US
dc.contributor.author李坤地en_US
dc.contributor.author李鴻瑜en_US
dc.date.accessioned2014-12-16T06:15:06Z
dc.date.available2014-12-16T06:15:06Z
dc.date.issued2013-10-01en_US
dc.description.abstract一種靜態隨機存取記憶體包含有:一閂鎖電路,具有一第一存取端和一第二存取端;一第一開關電路,其具有一第一位元傳送端耦接於該第一存取端,和一第二位元傳送端;一第二開關電路,其具有一第三位元傳送端耦接於該第二存取端,和一第四位元傳送端耦接於該第二位元傳送端;一第三開關電路,其具有一第五位元傳送端耦接於該第四位元傳送端,和一第六位元傳送端耦接於一位元線;以及一感測放大器耦接於該位元線,用以判斷藉由該位元線所傳遞之位元值;其中於一資料寫入模式時,該第一開關電路以及該第二開關電路不同時導通。zh_TW
dc.identifier.govdocG11C011/419zh_TW
dc.identifier.govdocG11C007/00zh_TW
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/105130
dc.language.isozh_TWen_US
dc.title靜態隨機存取記憶體zh_TW
dc.typePatentsen_US

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