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Optical characteristics of GaAs-based high index contrast photonic crystal lasers with deeply-etched air holes

dc.citation.woscount0en_US
dc.contributor.authorHong, Kuo-Binen_US
dc.contributor.authorYang, Chun-Chiehen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2017-04-21T06:49:20Z
dc.date.available2017-04-21T06:49:20Z
dc.date.issued2016en_US
dc.description.abstractWe study the mode switching behavior of GaAs-based high index contrast photonic crystal lasers influenced by deeply-etched air holes. Higher order guiding waves could coherently couple out of photonic crystal and affect the laser output characteristics which are observed by angular resolved photoluminescence spectra when the air filling factor increased.en_US
dc.identifier.isbn978-4-8855-2306-9en_US
dc.identifier.issn2326-5442en_US
dc.identifier.journal2016 INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/134577
dc.identifier.wosnumberWOS:000392249800114en_US
dc.language.isoen_USen_US
dc.subjectMode switchingen_US
dc.subjectGaAsen_US
dc.subjectPhotonic crystalen_US
dc.subjectHigh index contrasten_US
dc.titleOptical characteristics of GaAs-based high index contrast photonic crystal lasers with deeply-etched air holesen_US
dc.typeProceedings Paperen_US

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