新穎二六族氧化物半導體之成長與光電特性研究
| dc.contributor.author | 林彥丞 | en_US |
| dc.contributor.author | Lin Yan-Cheng | en_US |
| dc.contributor.department | 國立交通大學電子物理學系（所） | zh_TW |
| dc.date.accessioned | 2014-12-13T10:43:23Z | |
| dc.date.available | 2014-12-13T10:43:23Z | |
| dc.date.issued | 2013 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC102-2112-M009-001-MY2 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=3111980&docId=422392 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/99728 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 新穎二六族氧化物半導體之成長與光電特性研究 | zh_TW |
| dc.title | Growth and Optoelectronic Properties of Novel Ii-Vi Oxide Semiconductors | en_US |
| dc.type | Plan | en_US |
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