Improvement of electrical characteristics for novel process-compatible floating channel solid-phase crystallized poly-Si TFTs

dc.citation.epage	140	en_US
dc.citation.spage	138	en_US
dc.contributor.author	Chang, Chia-Wen	en_US
dc.contributor.author	Chang, Che-Lun	en_US
dc.contributor.author	Lee, Jam-Wem	en_US
dc.contributor.author	Lei, Tan-Fu	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.date.accessioned	2014-12-08T15:11:54Z
dc.date.available	2014-12-08T15:11:54Z
dc.date.issued	2007	en_US
dc.description.abstract	High-performance polycrystalline-silicon thin-film transistors (poly-Si TFTs) with floating channel solid-phase crystallization are proposed for the first time. By adopting this novel crystallization scheme, a better crystalline poly-Si film can be obtained in the suspended channel film. Poly-Si TFTs with this novel floating channel structure have been successfully fabricated and the experimental results demonstrate a superior electrical performance and reliability.	en_US
dc.identifier.isbn	978-957-28522-4-8	en_US
dc.identifier.journal	IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/9124
dc.identifier.wosnumber	WOS:000258177700034
dc.language.iso	en_US	en_US
dc.title	Improvement of electrical characteristics for novel process-compatible floating channel solid-phase crystallized poly-Si TFTs	en_US
dc.type	Proceedings Paper	en_US

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