Modulation of the Electrical Characteristics of HfOx/TiN RRAM Devices through the Top Electrode Metal
| dc.citation.epage | 126 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 119 | en_US |
| dc.citation.volume | 28 | en_US |
| dc.contributor.author | Chang, K. M. | en_US |
| dc.contributor.author | Tzeng, W. H. | en_US |
| dc.contributor.author | Liu, K. C. | en_US |
| dc.contributor.author | Lai, W. R. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:29:05Z | |
| dc.date.available | 2014-12-08T15:29:05Z | |
| dc.date.issued | 2010 | en_US |
| dc.description.abstract | The effect of the top electrode on switching characteristics of a HfOx/TiN structure was investigated. From the electrical conduction analysis, the conduction mechanism between Pt and Ti was found to be quite different. A potential barrier formed in the Pt/HfOx interface showing the Fowler-Nordheim tunneling at high bias. However, it was not observed in the Ti/HfOx structure. Reactive metal Ti interacted with the underlying HfOx film leading to destruction of the barrier height. As such, the device lost the ability to operate at the mu A compliance current range. Pt/HfOx demonstrated the merit of a large resistance ratio and a low operation current (Ireset = 20 mu A). However, Ti/HfOx exhibited better voltage dispersion at the low resistance state (0.5V dispersion). The electrode plays a dominant role in determining the electrical characteristics of a resistive random access memory (RRAM) device. Therefore, choosing an adequate electrode for RRAM is an important consideration. | en_US |
| dc.identifier.doi | 10.1149/1.3372569 | en_US |
| dc.identifier.isbn | 978-1-60768-142-7 | en_US |
| dc.identifier.issn | 1938-5862 | en_US |
| dc.identifier.journal | DIELECTRICS FOR NANOSYSTEMS 4: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/1.3372569 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/20989 | |
| dc.identifier.wosnumber | WOS:000313250400010 | |
| dc.language.iso | en_US | en_US |
| dc.title | Modulation of the Electrical Characteristics of HfOx/TiN RRAM Devices through the Top Electrode Metal | en_US |
| dc.type | Proceedings Paper | en_US |