Wavelength switching transition in quantum dot lasers
| dc.citation.epage | en_US | |
| dc.citation.issue | 8 | en_US |
| dc.citation.volume | 90 | en_US |
| dc.citation.woscount | 9 | |
| dc.contributor.author | Wang, Hsing-Yeh | en_US |
| dc.contributor.author | Cheng, Hsu-Chieh | en_US |
| dc.contributor.author | Lin, Sheng-Di | en_US |
| dc.contributor.author | Lee, Chien-Ping | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:14:41Z | |
| dc.date.available | 2014-12-08T15:14:41Z | |
| dc.date.issued | 2007-02-19 | en_US |
| dc.description.abstract | Control and the selection of the ground state emission and/or the excited state emission of an InAs quantum dot laser have been demonstrated. By controlling the currents injected into each section of a two-section cavity, switching between the ground state emission and the excited state emission with a separation of 100 nm was achieved. With a constant total current, either ground state lasing (similar to 1.3 mu m), excited state lasing (similar to 1.2 mu m), or dual state lasing can be obtained simply by adjusting the current ratio between the two sections. (c) 2007 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.2709987 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2709987 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/11126 | |
| dc.identifier.wosnumber | WOS:000244420600012 | |
| dc.language.iso | en_US | en_US |
| dc.title | Wavelength switching transition in quantum dot lasers | en_US |
| dc.type | Article | en_US |