Rapid thermal chemical vapor deposition of nitrogen-doped polysilicon for high-performance and high-reliability CMOS technology
| dc.citation.epage | 334 | en_US |
| dc.citation.spage | 329 | en_US |
| dc.citation.volume | 387 | en_US |
| dc.contributor.author | Sun, SC | en_US |
| dc.contributor.author | Wang, LS | en_US |
| dc.contributor.author | Yeh, FL | en_US |
| dc.contributor.department | 電機學院 | zh_TW |
| dc.contributor.department | College of Electrical and Computer Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:27:45Z | |
| dc.date.available | 2014-12-08T15:27:45Z | |
| dc.date.issued | 1995 | en_US |
| dc.identifier.isbn | 1-55899-290-1 | en_US |
| dc.identifier.issn | 0272-9172 | en_US |
| dc.identifier.journal | RAPID THERMAL AND INTEGRATED PROCESSING IV | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/20006 | |
| dc.identifier.wosnumber | WOS:A1995BE31M00040 | |
| dc.language.iso | en_US | en_US |
| dc.title | Rapid thermal chemical vapor deposition of nitrogen-doped polysilicon for high-performance and high-reliability CMOS technology | en_US |
| dc.type | Proceedings Paper | en_US |
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