Impact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide process
| dc.citation.epage | 1101 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.spage | 1097 | en_US |
| dc.citation.volume | 46 | en_US |
| dc.contributor.author | Chang, TY | en_US |
| dc.contributor.author | Lei, TF | en_US |
| dc.contributor.author | Chao, TS | en_US |
| dc.contributor.author | Chen, SW | en_US |
| dc.contributor.author | Kao, LM | en_US |
| dc.contributor.author | Chen, SK | en_US |
| dc.contributor.author | Tuan, A | en_US |
| dc.contributor.author | Su, TP | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:42:06Z | |
| dc.date.available | 2014-12-08T15:42:06Z | |
| dc.date.issued | 2002-08-01 | en_US |
| dc.description.abstract | In our previous study, using NF3 annealed poly-Si to improve gate oxide integrity for Co-silicide process has been proposed [SSDM, 1998, p. 164]. It is very interesting and important to know the mechanism of both F and N incorporation in the SiO2 and Co-salicide. In this study, F and/or N will be implanted into poly-Si with/without Co-salicide process, to identify the interaction of N and F in the SiO2 and Co-salicide process. In our work, we will describe the optimized structure and F/N incorporation for Co-silicide process. (C) 2002 Elsevier Science Ltd. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/S0038-1101(02)00048-5 | en_US |
| dc.identifier.issn | 0038-1101 | en_US |
| dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/S0038-1101(02)00048-5 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/28603 | |
| dc.identifier.wosnumber | WOS:000177094400005 | |
| dc.language.iso | en_US | en_US |
| dc.subject | gate oxide integrity (GOI) | en_US |
| dc.subject | Co-salicide | en_US |
| dc.subject | fluorine and nitrogen implantation | en_US |
| dc.subject | leakage performance | en_US |
| dc.subject | breakdown charge and stress induce leakage current (SILC) | en_US |
| dc.title | Impact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide process | en_US |
| dc.type | Article; Proceedings Paper | en_US |