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適用於通道特性長度低至十奈米左右之一維及二維奈米場效電晶體的非平衡通道背向散射模式架構

dc.contributor.author陳明哲en_US
dc.contributor.authorCHEN MING-JERen_US
dc.contributor.department國立交通大學電子工程學系及電子研究所zh_TW
dc.date.accessioned2014-12-13T10:49:43Z
dc.date.available2014-12-13T10:49:43Z
dc.date.issued2009en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC98-2221-E009-164-MY3zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=1903164&docId=315339en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/101764
dc.language.isozh_TWen_US
dc.title適用於通道特性長度低至十奈米左右之一維及二維奈米場效電晶體的非平衡通道背向散射模式架構zh_TW
dc.titleNon-Equilibrium Channel Backscattering Framework Suitable for 1-D and 2-D Nanofets with Feature Size down to 10 nm and beyonden_US
dc.typePlanen_US

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