Read Current Instability Arising from Random Telegraph Noise in Localized Storage, Multi-Level SONOS Flash Memory
| dc.citation.epage | + | en_US |
| dc.citation.spage | 214 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Gu, S. H. | en_US |
| dc.contributor.author | Li, C. W. | en_US |
| dc.contributor.author | Wang, Tahui | en_US |
| dc.contributor.author | Lu, W. P. | en_US |
| dc.contributor.author | Chen, K. C. | en_US |
| dc.contributor.author | Ku, Joseph | en_US |
| dc.contributor.author | Lu, Chih-Yuan | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2017-04-21T06:48:24Z | |
| dc.date.available | 2017-04-21T06:48:24Z | |
| dc.date.issued | 2006 | en_US |
| dc.description.abstract | Program/erase cycling stress induced read current fluctuations arising from random telegraph noise (RTN) in a localized storage, multi-level nitride flash memory (SONOS) is explored. Our study shows that localized charge storage significantly enhances RTN. The amplitude of RTN varies in different program levels of a multi-level cell. The broadening of read current distribution due to RTN is characterized and modeled. Improvement of bottom oxide robustness can reduce the read current fluctuations. | en_US |
| dc.identifier.isbn | 978-1-4244-0438-4 | en_US |
| dc.identifier.journal | 2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/135213 | |
| dc.identifier.wosnumber | WOS:000247357700056 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | <bold>Read Current Instability Arising from Random Telegraph Noise in Localized Storage, Multi-Level SONOS Flash Memory</bold> | en_US |
| dc.type | Proceedings Paper | en_US |
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