GaSe1-xSx Crystals for Teraherz Frequency Range
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DOI
10.1109/EDM.2009.5173939
Abstract
GaSe1-xSx single crystals has been grown by Bridgman-Stockbarger technique. Structural quality has been evaluated with TEM observation. Terahertz time-domain spectroscopy has been applied for measurements of the frequency-dependent optical constant of doped GaSe crystals as a function of s-content.