DC-RF performance improvement for strained 0.13 mu m MOSFETs mounted on a flexible plastic substrate

Abstract

By applying 0.7% tensile strain to the flexible die of a 0.13 mu m thin-body (40 mu m) Si MOSFET mounted on plastic, both the DC and RF performance have been improved. The current I(d,sat) was 14.3% higher, and f(T) increased from 103 to 118 GHz with NF(min) decreasing from 0.89 to 0.75 dB at 10 GHz. These improvements are comparable with those for SiN-capped 90 nm strained-Si nMOS and consistent with device simulations. The approach has the advantages of better RF passive devices on the insulating plastic substrate and low cost.