A 1v CMOS low-noise amplifier with inductive resonated for 3.1-10.6GHz UWB wireless receiver

dc.citation.epage	18	en_US
dc.citation.spage	15	en_US
dc.contributor.author	Huang, Zhe-Yang	en_US
dc.contributor.author	Huang, Che-Cheng	en_US
dc.contributor.author	Chen, Chun-Chieh	en_US
dc.contributor.author	Hung, Chung-Chih	en_US
dc.contributor.department	電信工程研究所	zh_TW
dc.contributor.department	Institute of Communications Engineering	en_US
dc.date.accessioned	2014-12-08T15:10:07Z
dc.date.available	2014-12-08T15:10:07Z
dc.date.issued	2007	en_US
dc.description.abstract	In this paper a low power and low-noise amplifier (LNA) is designed for ultra-wideband (UWB) system. The design consists of a wideband input impedance matching network, two stages common-source amplifier with inductive resonated load and an output buffer measurement purpose; it is fabricated in TSMC 0.18um standard RF CMOS process. The measured UWB LNA gives 12.0dB gain and 8.0GHz 3dB bandwidth (3.0-11.0GHz) while consuming only 7.3mW through a 1.0V supply including the buffer. Over the 3.1-10.6 GHz frequency band, a minimum noise figure of 4.2dB and input return loss lower than -8.7dB have been achieved.	en_US
dc.identifier.isbn	978-1-4244-1592-2	en_US
dc.identifier.journal	20TH ANNIVERSARY IEEE INTERNATIONAL SOC CONFERENCE, PROCEEDINGS	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/7734
dc.identifier.wosnumber	WOS:000257572200004
dc.language.iso	en_US	en_US
dc.title	A 1v CMOS low-noise amplifier with inductive resonated for 3.1-10.6GHz UWB wireless receiver	en_US
dc.type	Article	en_US

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