Numerical Study of In0.15Ga0.85N/GaN MQW Solar Cells with varying well band structure
| dc.citation.epage | 2138 | en_US |
| dc.citation.spage | 2136 | en_US |
| dc.contributor.author | Wang, Hsun-Wen | en_US |
| dc.contributor.author | Hsieh, Chi-Chang | en_US |
| dc.contributor.author | Lai, Fang-I | en_US |
| dc.contributor.author | Lin, Shiuan-Huei | en_US |
| dc.contributor.author | Kuo, Hao-Chung | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:36:39Z | |
| dc.date.available | 2014-12-08T15:36:39Z | |
| dc.date.issued | 2013 | en_US |
| dc.description.abstract | The photovoltaic properties of 14 pairs In0.15Ga0.85N/GaN multiple quantum well solar cells with varying indium composition of QW are investigated numerically. The simulation results show that smooth well structure of energy band can be reduce carrier confinement and the recombination to enhance photo-current generation. This helpful design is easy to improve carrier transport to collection. And the optimal In0.15Ga0.85N/GaN MQW solar cell had V-oc of 2.37V, J(sc) of 0.73, and the efficiency of 0.79%, which the efficiencies is enhanced 69.2 % to reference cell. | en_US |
| dc.identifier.isbn | 978-1-4799-3299-3 | en_US |
| dc.identifier.issn | 0160-8371 | en_US |
| dc.identifier.journal | 2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/25007 | |
| dc.identifier.wosnumber | WOS:000340054100480 | |
| dc.language.iso | en_US | en_US |
| dc.subject | photovoltaic cells | en_US |
| dc.subject | InGaN | en_US |
| dc.subject | MQW | en_US |
| dc.title | Numerical Study of In0.15Ga0.85N/GaN MQW Solar Cells with varying well band structure | en_US |
| dc.type | Proceedings Paper | en_US |
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