Study of Schottky barriers on n-type GaN grown by LP-MOCVD
| dc.citation.epage | A517 | en_US |
| dc.citation.spage | A515 | en_US |
| dc.contributor.author | Guo, JD | en_US |
| dc.contributor.author | Feng, MS | en_US |
| dc.contributor.author | Pan, FM | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:27:44Z | |
| dc.date.available | 2014-12-08T15:27:44Z | |
| dc.date.issued | 1995 | en_US |
| dc.identifier.isbn | 7-5053-3285-6 | en_US |
| dc.identifier.journal | PROCEEDINGS OF THE FOURTH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/19996 | |
| dc.identifier.wosnumber | WOS:A1995BF21N00148 | |
| dc.language.iso | en_US | en_US |
| dc.title | Study of Schottky barriers on n-type GaN grown by LP-MOCVD | en_US |
| dc.type | Proceedings Paper | en_US |
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