製備合成氧化物在互補式金氧半閘極介電層及自旋電元件應用之研究(III)
| dc.contributor.author | 趙天生 | en_US |
| dc.contributor.author | TIEN-SHENGCHAO | en_US |
| dc.contributor.department | 交通大學電子物理系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:31:24Z | |
| dc.date.available | 2014-12-13T10:31:24Z | |
| dc.date.issued | 2004 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC93-2215-E009-037 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=1026707&docId=195185 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/90907 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 製備合成氧化物在互補式金氧半閘極介電層及自旋電元件應用之研究(III) | zh_TW |
| dc.title | Deposition and Characterization of Compound Oxide Films for High-K CMOS Gate Dielectrics and Spintronic Applications(III) | en_US |
| dc.type | Plan | en_US |