<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css"> Skip to main content

高功率0.808和0.98μm雷射(邊射型)

dc.contributor.author黃凱風en_US
dc.contributor.authorHUANG KAI-FENGen_US
dc.contributor.department國立交通大學電子物理學系zh_TW
dc.date.accessioned2014-12-13T10:39:11Z
dc.date.available2014-12-13T10:39:11Z
dc.date.issued1996en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC85-2215-E009-020zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=230448&docId=41895en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/96167
dc.language.isozh_TWen_US
dc.subject高功率半導體雷射zh_TW
dc.subject分子束磊晶zh_TW
dc.subject鏡面氧化毀損zh_TW
dc.subjectHigh power semiconductor laseren_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectCatastrophic opiticaldamageen_US
dc.title高功率0.808和0.98μm雷射(邊射型)zh_TW
dc.titleHigh Power 0.808 and 0.98.mu.m Semiconductor Lasersen_US
dc.typePlanen_US

Files

License bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed to upon submission
Description: