RESISTIVE RANDOM ACCESS MEMORY DEVICE AND OPERATING METHOD THEREOF
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20140133213 | zh_TW |
| dc.contributor.author | LIU Po-Tsun | en_US |
| dc.contributor.author | HSU Ching-Hui | en_US |
| dc.contributor.author | FAN Yang-Shun | en_US |
| dc.date.accessioned | 2014-12-16T06:14:48Z | |
| dc.date.available | 2014-12-16T06:14:48Z | |
| dc.date.issued | 2014-05-15 | en_US |
| dc.description.abstract | A resistive random access memory (RRAM) device and operating method are disclosed herein. The RRAM device includes at least one RRAM cell and a control circuit. The RRAM cell includes a bottom electrode, an amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) layer, a Ti layer and a top electrode. The a-IGZO layer is disposed on the bottom layer. The Ti layer is disposed on the a-IGZO layer. The top electrode is disposed on the Ti layer. The control circuit is configured to provide at least one electrical signal to the RRAM cell, so as to change the resistance value of the RRAM cell. | zh_TW |
| dc.identifier.govdoc | G11C013/04 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/104920 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | RESISTIVE RANDOM ACCESS MEMORY DEVICE AND OPERATING METHOD THEREOF | zh_TW |
| dc.type | Patents | en_US |