SILICON-CONTROLLED RECTIFIER AND AN ESD CLAMP CIRCUIT
| dc.citation.patentcountry | USA | en_US |
| dc.citation.patentnumber | 20170077080 | en_US |
| dc.contributor.author | Chun-Yen Chang | en_US |
| dc.contributor.author | Shiang-Shiou Yen | en_US |
| dc.contributor.author | Shao-Chin Chang | en_US |
| dc.contributor.author | Che-Wei Chiang | en_US |
| dc.date.accessioned | 2019-04-11T05:42:37Z | |
| dc.date.available | 2019-04-11T05:42:37Z | |
| dc.date.issued | 2017-03-16 | en_US |
| dc.description.abstract | A silicon-controlled rectifier (SCR) includes a first-type field, a second-type first field and a second-type second field disconnectedly formed in a first-type well; an entire first-type doped region formed within the first-type field; a segmented second-type doped region formed within the second-type first field; and a segmented first-type doped region formed within the second-type second field. | en_US |
| dc.identifier.govdoc | H01L027/02 | en_US |
| dc.identifier.govdoc | H01L029/74 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/151261 | |
| dc.language.iso | en_US | en_US |
| dc.title | SILICON-CONTROLLED RECTIFIER AND AN ESD CLAMP CIRCUIT | en_US |
| dc.type | Patents | en_US |