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Nanogap fabrication on palladium electrodes for field emission display applications

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dc.citation.epage585en_US
dc.citation.spage583en_US
dc.citation.volume38en_US
dc.contributor.authorTsai, Chih-Haoen_US
dc.contributor.authorChen, Kuan-Jungen_US
dc.contributor.authorPan, Fu-Mingen_US
dc.contributor.authorLo, Hsiang-Yuen_US
dc.contributor.authorLi, Yimingen_US
dc.contributor.authorLiu, Meien_US
dc.contributor.authorMo, Chi-Nengen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.date.accessioned2014-12-08T15:11:01Z
dc.date.available2014-12-08T15:11:01Z
dc.date.issued2007en_US
dc.description.abstractWe have used focused ion beam (FIB) to produce nanogaps on palladium thin film line electrodes. The two facing cross-sections of the as-prepared nanogap were smooth and exhibited a large turn-on voltage for electron field emission depending on the separation of the gap. Hydrogen plasma treatment was used to increase the edge roughness of the nanogap, and thereby dramatically improve the field emission characteristics. For a gap with a separation of 90 nm, the turn-on voltage reduced to 50 V from 175 V after the hydrogen plasma treatment.en_US
dc.identifier.doi10.1889/1.2785368en_US
dc.identifier.issn0097-966Xen_US
dc.identifier.journal2007 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXVIII, BOOKS I AND IIen_US
dc.identifier.urihttp://dx.doi.org/10.1889/1.2785368en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/8445
dc.identifier.wosnumberWOS:000259075300156
dc.language.isoen_USen_US
dc.titleNanogap fabrication on palladium electrodes for field emission display applicationsen_US
dc.typeProceedings Paperen_US

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