High-Speed and High-Power GaSb Based Photodiode for 2.5 mu m Wavelength Operations
| dc.citation.epage | 473 | en_US |
| dc.citation.spage | 472 | en_US |
| dc.contributor.author | Chao, Rui-Lin | en_US |
| dc.contributor.author | Wun, Jhih-Min | en_US |
| dc.contributor.author | Wang, Yu-Wen | en_US |
| dc.contributor.author | Chen, Yi-Han | en_US |
| dc.contributor.author | Bowers, J. E. | en_US |
| dc.contributor.author | Shi, Jin-Wei | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2018-08-21T05:56:51Z | |
| dc.date.available | 2018-08-21T05:56:51Z | |
| dc.date.issued | 2016-01-01 | en_US |
| dc.description.abstract | By using partially depleted Ga0.8In0.2As0.16Sb0.84 absorber in GaSb based photodiodes for 2.5 mu m wave length operation, such device achieves high-speed and high-saturation current (3.6 mA/6 GHz) performances with low dark current (0.7 mu A at -2V). Device modeling results suggest that the internal carrier response time limits its dynamic performance. | en_US |
| dc.identifier.issn | 2374-0140 | en_US |
| dc.identifier.journal | 2016 IEEE PHOTONICS CONFERENCE (IPC) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/146741 | |
| dc.identifier.wosnumber | WOS:000406880100218 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | High-Speed and High-Power GaSb Based Photodiode for 2.5 mu m Wavelength Operations | en_US |
| dc.type | Proceedings Paper | en_US |
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