Low temperature processed poly-Si thin-film transistors with thinner LPD-SiO2 as gate insulator and its reliability
| dc.citation.epage | 96 | en_US |
| dc.citation.spage | 93 | en_US |
| dc.contributor.author | Fan, CL | en_US |
| dc.contributor.author | Yeh, CF | en_US |
| dc.contributor.author | Tsai, HK | en_US |
| dc.contributor.author | Lur, W | en_US |
| dc.contributor.author | Yen, PW | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:27:41Z | |
| dc.date.available | 2014-12-08T15:27:41Z | |
| dc.date.issued | 1995 | en_US |
| dc.identifier.isbn | 0-7803-3056-0 | en_US |
| dc.identifier.journal | AMLCDS '95 - SECOND INTERNATIONAL WORKSHOP ON ACTIVE MATRIX LIQUID CRYSTAL DISPLAYS, WORKSHOP PROCEEDINGS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/19938 | |
| dc.identifier.wosnumber | WOS:A1995BG36H00020 | |
| dc.language.iso | en_US | en_US |
| dc.title | Low temperature processed poly-Si thin-film transistors with thinner LPD-SiO2 as gate insulator and its reliability | en_US |
| dc.type | Proceedings Paper | en_US |
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