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30 GHz 2-Stage MMIC Low Noise Amplifier using GaAs Pseudomorphic HEMT

dc.citation.woscount0en_US
dc.contributor.authorRasmi, Amizaen_US
dc.contributor.authorAzmi, I. M.en_US
dc.contributor.authorRahim, A. I. A.en_US
dc.contributor.authorHsu, Heng-Tungen_US
dc.contributor.authorChang, Edward Yien_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.date.accessioned2017-04-21T06:49:59Z
dc.date.available2017-04-21T06:49:59Z
dc.date.issued2013en_US
dc.identifier.isbn978-1-4673-2523-3en_US
dc.identifier.journal2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/136163
dc.identifier.wosnumberWOS:000380585600014en_US
dc.language.isoen_USen_US
dc.title30 GHz 2-Stage MMIC Low Noise Amplifier using GaAs Pseudomorphic HEMTen_US
dc.typeProceedings Paperen_US

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