高效能動態起始電壓絕緣層上矽元件
| dc.contributor.author | 趙天生 | en_US |
| dc.contributor.author | TIEN-SHENGCHAO | en_US |
| dc.contributor.department | 國立交通大學電子物理學系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:33:37Z | |
| dc.date.available | 2014-12-13T10:33:37Z | |
| dc.date.issued | 2003 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC92-2215-E009-070 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=873573&docId=167366 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/92168 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 高效能動態起始電壓絕緣層上矽元件 | zh_TW |
| dc.title | High Performance DTMOS SOI Devices | en_US |
| dc.type | Plan | en_US |