Ferroelectric thin film processing for ferroelectric field-effect transistor
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20030224537 | zh_TW |
| dc.contributor.author | Chen, San-Yuan | en_US |
| dc.contributor.author | Chin, Albert | en_US |
| dc.contributor.author | Sun, Chia-Liang | en_US |
| dc.date.accessioned | 2014-12-16T06:16:20Z | |
| dc.date.available | 2014-12-16T06:16:20Z | |
| dc.date.issued | 2003-12-04 | en_US |
| dc.description.abstract | The present invention relates to a method for manufacturing a ferroelectric field-effect transistor, particularly to a ferroelectric field-effect transistor with a metal/ferroelectric/insulator/semiconductor (MFIS) gate capacitor structure. The method comprises steps of depositing a bismuth layered ferroelectric film on the insulator buffered Si, after a high-temperature thermal treatment, depositing an upper electrode on the bismuth layered ferroelectric film. | zh_TW |
| dc.identifier.govdoc | H01L021/00 | zh_TW |
| dc.identifier.govdoc | H01L021/20 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105785 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | Ferroelectric thin film processing for ferroelectric field-effect transistor | zh_TW |
| dc.type | Patents | en_US |