奈米MOS元件之矽化物、超淺接面及接觸孔之研發(I)
| dc.contributor.author | 雷添福 | en_US |
| dc.contributor.author | LEI TAN-FU | en_US |
| dc.contributor.department | 交通大學電子工程研究所 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:34:37Z | |
| dc.date.available | 2014-12-13T10:34:37Z | |
| dc.date.issued | 2002 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC91-2215-E009-047 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=784415&docId=150773 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/92879 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 奈米MOS元件之矽化物、超淺接面及接觸孔之研發(I) | zh_TW |
| dc.title | Development of Silicide, Ultra-Shallow Junction and Contact Hole in Nano MOS Devices (I) | en_US |
| dc.type | Plan | en_US |