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鑽石薄膜成長方法

dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber201430161zh_TW
dc.contributor.author張立en_US
dc.contributor.author陳昱長en_US
dc.contributor.author陳致宇en_US
dc.date.accessioned2014-12-16T06:17:36Z
dc.date.available2014-12-16T06:17:36Z
dc.date.issued2014-08-01en_US
dc.description.abstract一種鑽石薄膜成長方法包含多個步驟。首先提供一底板,然後藉由一磊晶步驟形成一異質基板於底板上,其中異質基板係由多個晶粒長成,且異質基板之一上表面具有由多個晶粒之接合處所形成之不規則的多個微凹槽。接著提供多個鑽石核種嵌入多個微凹槽。最後,沉積一鑽石薄膜於異質基板之上表面。上述方法,可使鑽石容易成核於異質基板上,同時避免一般刮痕或種晶法所造成的基板表面損傷,進一步成長均勻平整且覆蓋性佳的鑽石薄膜。zh_TW
dc.identifier.govdocC23C016/34zh_TW
dc.identifier.govdocC23C016/455zh_TW
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/106511
dc.language.isozh_TWen_US
dc.title鑽石薄膜成長方法zh_TW
dc.typePatentsen_US

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