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Improved OLEDs with single ambipolar material for hole-transport and electron-transport layers

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dc.citation.spage1981en_US
dc.citation.volume39en_US
dc.contributor.authorLin, Mei-Fangen_US
dc.contributor.authorWong, Wai-Kwoken_US
dc.contributor.authorCheah, Kok-Waien_US
dc.contributor.authorTam, Hoi-Lamen_US
dc.contributor.authorTse, Shing Chien_US
dc.contributor.authorSo, Shu-Kongen_US
dc.contributor.authorChen, Chin H.en_US
dc.contributor.department電子與資訊研究中心zh_TW
dc.contributor.departmentMicroelectronics and Information Systems Research Centeren_US
dc.date.accessioned2018-08-21T05:57:06Z
dc.date.available2018-08-21T05:57:06Z
dc.date.issued2008-01-01en_US
dc.description.abstractAn organic light-emitting device (OLED) with enhanced efficiency by employing an ambipolar material, 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) as both hole-transport and electron-transport layers has been developed. The efficiency of the device is more than 40% enhanced compared with a control device. Moreover, the operational stability, is also greatly improved as it minimizes the formation of all unstable redox species of Alq(3)(+) as well as NPB-.en_US
dc.identifier.doi10.1889/1.3069586en_US
dc.identifier.issn0097-966Xen_US
dc.identifier.journal2008 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXIX, BOOKS I-IIIen_US
dc.identifier.urihttp://dx.doi.org/10.1889/1.3069586en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/147055
dc.identifier.wosnumberWOS:000258530100511en_US
dc.language.isoen_USen_US
dc.titleImproved OLEDs with single ambipolar material for hole-transport and electron-transport layersen_US
dc.typeProceedings Paperen_US

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