以含氮氧化矽閘極製程製作高穩定度矽金氧半元件
| dc.contributor.author | 胡振國 | en_US |
| dc.contributor.author | HWU JENN-GWO | en_US |
| dc.contributor.department | 國立台灣大學電機工程學系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:40:11Z | |
| dc.date.available | 2014-12-13T10:40:11Z | |
| dc.date.issued | 1994 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC83-0404-E002-018 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=109741&docId=17462 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/97243 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 以含氮氧化矽閘極製程製作高穩定度矽金氧半元件 | zh_TW |
| dc.title | Stable SiMOS Devices with Oxynitride Gate Dielectrics. | en_US |
| dc.type | Plan | en_US |
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