奈米級側向成長磊晶之薄膜發光二極體及其製作方法
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | I459592 | zh_TW |
| dc.contributor.author | 李佳祐 | en_US |
| dc.contributor.author | 王朝勳 | en_US |
| dc.contributor.author | 邱鏡學 | en_US |
| dc.contributor.author | 郭浩中 | en_US |
| dc.date.accessioned | 2014-12-16T06:14:49Z | |
| dc.date.available | 2014-12-16T06:14:49Z | |
| dc.date.issued | 2014-11-01 | en_US |
| dc.identifier.govdoc | H01L033/16 | zh_TW |
| dc.identifier.govdoc | H01L033/22 | zh_TW |
| dc.identifier.govdoc | H01L033/02 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/104930 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 奈米級側向成長磊晶之薄膜發光二極體及其製作方法 | zh_TW |
| dc.type | Patents | en_US |