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Performance Benchmarking of Monolayer and Bilayer Two-Dimensional Transition Metal Dichalcogenide (TMD) Based Logic Circuits

dc.citation.woscount0en_US
dc.contributor.authorYu, Chang-Hungen_US
dc.contributor.authorSu, Pinen_US
dc.contributor.authorChuang, Ching-Teen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2017-04-21T06:49:25Z
dc.date.available2017-04-21T06:49:25Z
dc.date.issued2016en_US
dc.identifier.isbn978-1-4673-9478-9en_US
dc.identifier.issn1930-8868en_US
dc.identifier.journal2016 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/136434
dc.identifier.wosnumberWOS:000389022000041en_US
dc.language.isoen_USen_US
dc.titlePerformance Benchmarking of Monolayer and Bilayer Two-Dimensional Transition Metal Dichalcogenide (TMD) Based Logic Circuitsen_US
dc.typeProceedings Paperen_US

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