Asymmetric Gate Capacitance and High Frequency Characteristic Fluctuations in 16 nm Bulk MOSFETs Due to Random Distribution of Discrete Dopants
| dc.citation.epage | 100 | en_US |
| dc.citation.spage | 99 | en_US |
| dc.contributor.author | Li, Yiming | en_US |
| dc.contributor.author | Hwang, Chih-Hong | en_US |
| dc.contributor.author | Yeh, Ta-Ching | en_US |
| dc.contributor.department | 電信工程研究所 | zh_TW |
| dc.contributor.department | Institute of Communications Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:48:22Z | |
| dc.date.available | 2014-12-08T15:48:22Z | |
| dc.date.issued | 2008 | en_US |
| dc.identifier.isbn | 978-1-4244-2071-1 | en_US |
| dc.identifier.journal | 2008 IEEE SILICON NANOELECTRONICS WORKSHOP | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/32220 | |
| dc.identifier.wosnumber | WOS:000279102800051 | |
| dc.language.iso | en_US | en_US |
| dc.title | Asymmetric Gate Capacitance and High Frequency Characteristic Fluctuations in 16 nm Bulk MOSFETs Due to Random Distribution of Discrete Dopants | en_US |
| dc.type | Article | en_US |
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