A Low Operating Voltage IGZO TFT Using LaLuO3 Gate Dielectric

Abstract

This study proposes a low operation voltage indium-gallium-zinc oxide (IGZO) thin-film transistor using a high-kappa lanthanum-lutetium oxide as the gate dielectric. It is the first time to integrate the high-kappa LaLuO3 into an IGZO TFT. The resulting LaLuO3/IGZO TFT shows a low threshold voltage of 0.32 V, a small sub-threshold swing of 310 mV/decade and an acceptable mobility (mu(FE)) of 6.6 cm(2)/V-s. The low V-T and small SS allow device operation voltage below 2.5 V.