Growth of atomic-scale aluminum film on GaAs substrate
| dc.citation.epage | 870 | en_US |
| dc.citation.spage | 868 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Lo, Ming-Cheng | en_US |
| dc.contributor.author | Fan, Yen-Ting | en_US |
| dc.contributor.author | Wu, Chu-Chun | en_US |
| dc.contributor.author | Chen, Peng-Yu | en_US |
| dc.contributor.author | Lin, Sheng-Di | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2017-04-21T06:48:52Z | |
| dc.date.available | 2017-04-21T06:48:52Z | |
| dc.date.issued | 2016 | en_US |
| dc.description.abstract | We present the method for large-area growth of single-crystalline Al films in atomic scale on GaAs substrate by using molecular beam epitaxy. The grown Al film of thickness down to 5 nm exhibits smooth surface morphology, a clear and single X-ray diffraction peak in. theta-2 theta scan, and nearly transparent optical response. This work open a window for ex-situ studying quantum size effect in metal film. | en_US |
| dc.identifier.isbn | 978-1-5090-1493-4 | en_US |
| dc.identifier.journal | 2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/134648 | |
| dc.identifier.wosnumber | WOS:000391840000247 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Growth of atomic-scale aluminum film on GaAs substrate | en_US |
| dc.type | Proceedings Paper | en_US |
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