Characteristics imrovement for flexible a-Si:H Thin Film Transistor with post treatment processes

Abstract

The performances of flexible a-Si:H TFTs on stainless foil with and without silicon nitride passivation layer were discussed in this study. The experiment results indicated the reliability of a-Si:H TFTs with passivation layer under mechanical strains was improved. That\'s related to the hydrogen passivating effect during deposition and post-annealing process.