GATE STRUCTURE
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20150236109 | zh_TW |
| dc.contributor.author | CHANG Yi | en_US |
| dc.contributor.author | KUO Chien-I | en_US |
| dc.contributor.author | HSU Heng-Tung | en_US |
| dc.date.accessioned | 2015-12-04T07:03:12Z | |
| dc.date.available | 2015-12-04T07:03:12Z | |
| dc.date.issued | 2015-08-20 | en_US |
| dc.description.abstract | The present invention discloses a gate structure, which is applied for an electronic component comprising a substrate and an active region defined thereon, and such the gate structure is disposed in the active region and is a T-shaped gate having a stem with a height of 250 nm. Preferably, the gate structure has a gate length of 60 nm. | zh_TW |
| dc.identifier.govdoc | H01L029/423 | zh_TW |
| dc.identifier.govdoc | H01L021/285 | zh_TW |
| dc.identifier.govdoc | H01L029/778 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/128683 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | GATE STRUCTURE | zh_TW |
| dc.type | Patents | en_US |