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InN Nanopillar Photodetector with Enhanced Infrared Response Using Indium-Tin Oxide Nanorods

dc.contributor.authorHsu, Lung-Hsingen_US
dc.contributor.authorCheng, Yuh-Jenen_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLin, Chien-Chungen_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2018-08-21T05:57:10Z
dc.date.available2018-08-21T05:57:10Z
dc.date.issued2017-01-01en_US
dc.description.abstractEnhanced infrared photoresponse is observed in InN pillars/ITO rods photodetectors fabricated by LP-MOCVD and oblique-angle electron beam evaporation. The enhanced IR portion photocurrent as high as 19% can be measured via AM1.5G solar simulated spectra.en_US
dc.identifier.issn2160-9020en_US
dc.identifier.journal2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/147136
dc.identifier.wosnumberWOS:000427296200038en_US
dc.language.isoen_USen_US
dc.titleInN Nanopillar Photodetector with Enhanced Infrared Response Using Indium-Tin Oxide Nanorodsen_US
dc.typeProceedings Paperen_US

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