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極大型積體電路之深次微米元件及分析及模擬的研究(III)

dc.contributor.author吳慶源en_US
dc.contributor.department國立交通大學電子工程學系zh_TW
dc.date.accessioned2014-12-13T10:37:21Z
dc.date.available2014-12-13T10:37:21Z
dc.date.issued2001en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC90-2215-E009-114zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=665837&docId=126408en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/94565
dc.language.isozh_TWen_US
dc.subject深次微米元件zh_TW
dc.subject極大型積體電路zh_TW
dc.subjectDeep submicron deviceen_US
dc.subjectULSIen_US
dc.title極大型積體電路之深次微米元件及分析及模擬的研究(III)zh_TW
dc.titleCharacterization and Modeling Techniques of Deep-Submicrometer Devices for ULSI Circuits (III)en_US
dc.typePlanen_US

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