A new low voltage CMOS micromixer for 2.45GHz applications

dc.citation.epage	303	en_US
dc.citation.spage	301	en_US
dc.contributor.author	Yen, Chin-Hsien	en_US
dc.contributor.author	Chang, Win-Ming	en_US
dc.contributor.author	Cheng, Kuo-Hua	en_US
dc.contributor.author	Jou, Christina F.	en_US
dc.contributor.department	傳播研究所	zh_TW
dc.contributor.department	Institute of Communication Studies	en_US
dc.date.accessioned	2014-12-08T15:25:08Z
dc.date.available	2014-12-08T15:25:08Z
dc.date.issued	2006	en_US
dc.description.abstract	This paper presents a new low voltage CMOS micromixer for 2.45GHz applications, which operates at 1V supply voltage. The new low voltage CMOS micromixer topology modified from basic BJT micromixer uses coupling capacitors to feed the RF signal so as to bias the two transistors in RF stage separately with lower voltage. The charge injection method is also adopted to improve the conversion gain and linearity under low voltage operation. With a power consumption of 1.72 mW the measurement shows voltage gain of 8.28 dB, input 1dB compression point of -5.63 dBm and input third-order intercept point of 4.21 dBm.	en_US
dc.identifier.isbn	1-4244-0179-8	en_US
dc.identifier.journal	2006 International Symposium on VLSI Design, Automation, and Test (VLSI-DAT), Proceedings of Technical Papers	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/17506
dc.identifier.wosnumber	WOS:000239709500080
dc.language.iso	en_US	en_US
dc.title	A new low voltage CMOS micromixer for 2.45GHz applications	en_US
dc.type	Proceedings Paper	en_US

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