THz emission characteristics of photoconductive antennas with different gap size fabricated on arsenic-ion-implanted GaAs
| dc.citation.epage | 103 | en_US |
| dc.citation.spage | 96 | en_US |
| dc.citation.volume | 4490 | en_US |
| dc.contributor.author | Liu, TA | en_US |
| dc.contributor.author | Tani, M | en_US |
| dc.contributor.author | Lin, GR | en_US |
| dc.contributor.author | Pan, CL | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:26:44Z | |
| dc.date.available | 2014-12-08T15:26:44Z | |
| dc.date.issued | 2001 | en_US |
| dc.description.abstract | Significant difference in temporal and spectral characteristics of THz radiation emitted by large- (1 mm) and small- (5mum) aperture dipole antennas fabricated on arsenic-ion-implanted GaAs and undoped semi-insulating GaAs is reported and attributed to the geometry of the antenna. | en_US |
| dc.identifier.doi | 10.1117/12.455413 | en_US |
| dc.identifier.isbn | 0-8194-4204-6 | en_US |
| dc.identifier.issn | 0277-786X | en_US |
| dc.identifier.journal | MULTIFREQUENCY ELECTRONIC/PHOTONIC DEVICES AND SYSTEMS FOR DUAL-USE APPLICATIONS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1117/12.455413 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/19007 | |
| dc.identifier.wosnumber | WOS:000174396400011 | |
| dc.language.iso | en_US | en_US |
| dc.subject | THz radiation | en_US |
| dc.subject | arsenic-ion-implanted GaAs | en_US |
| dc.subject | large-aperture photoconductive antenna | en_US |
| dc.subject | dipole antenna | en_US |
| dc.title | THz emission characteristics of photoconductive antennas with different gap size fabricated on arsenic-ion-implanted GaAs | en_US |
| dc.type | Proceedings Paper | en_US |