Structure of high power edge emission laser diode
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20090016396 | zh_TW |
| dc.contributor.author | Lu, Tien-Chang | en_US |
| dc.contributor.author | Chen, Chyong-Hua | en_US |
| dc.date.accessioned | 2014-12-16T06:15:51Z | |
| dc.date.available | 2014-12-16T06:15:51Z | |
| dc.date.issued | 2009-01-15 | en_US |
| dc.description.abstract | A structure of high power edge emission laser diode that has plural mode extension sublayers with a chirp periodic distribution is provided. The Near Field Pattern (NFP) is an L shape, and the high intensity portion is nicely overlapped with the multi quantum wells. Furthermore, the low intensity portion will extend to the n-type cladding as it can as possible. Accordingly, the optical power density on the mirror surface of the high power edge emission laser diode is lower down and the vertical divergence angle is decreased, so as to prolong its lifetime. | zh_TW |
| dc.identifier.govdoc | H01S005/34 | zh_TW |
| dc.identifier.govdoc | H01S005/343 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105552 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | Structure of high power edge emission laser diode | zh_TW |
| dc.type | Patents | en_US |