The performance limiting factors as RF MOSFETs scaling down
| dc.citation.epage | 154 | en_US |
| dc.citation.spage | 151 | en_US |
| dc.contributor.author | Wu, YH | en_US |
| dc.contributor.author | Chin, A | en_US |
| dc.contributor.author | Liang, CS | en_US |
| dc.contributor.author | Wu, CC | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:27:03Z | |
| dc.date.available | 2014-12-08T15:27:03Z | |
| dc.date.issued | 2000 | en_US |
| dc.description.abstract | The measured RF performance of 0.5, 0.25, and 0.18 mum MOSFETs gradually saturates as scaling down, which can be explained by the derived analytical equation and simulation. The overlap C-gd and non-quasi-static effect are the main factors but scales much slower than L-g. | en_US |
| dc.identifier.doi | 10.1109/RFIC.2000.854437 | en_US |
| dc.identifier.isbn | 0-7803-6281-0 | en_US |
| dc.identifier.journal | 2000 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/RFIC.2000.854437 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/19272 | |
| dc.identifier.wosnumber | WOS:000165927800034 | |
| dc.language.iso | en_US | en_US |
| dc.title | The performance limiting factors as RF MOSFETs scaling down | en_US |
| dc.type | Proceedings Paper | en_US |