Observation of second harmonic emission and three-photon fluorescence from Gallium-Nitride

dc.citation.epage	656	en_US
dc.citation.spage	655	en_US
dc.citation.volume	1	en_US
dc.contributor.author	Lee, CK	en_US
dc.contributor.author	Kao, FJ	en_US
dc.contributor.author	Wang, SC	en_US
dc.contributor.author	Pan, CL	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.date.accessioned	2014-12-08T15:27:06Z
dc.date.available	2014-12-08T15:27:06Z
dc.date.issued	2000	en_US
dc.description.abstract	In this study, optical emission from the undoped GaN epilayer sample was characterized using confocal micro-spectroscopy. A femtosecond laser was used to excite the sample. As the laser wavelength tuned from 762-796nm, the sample emitted a corresponding second harmonic signal from 381-398nm with a quadratic power dependence. A strong signal at 367nm resulted from a three-photon process with cubic power dependence was simultaneously observed for the first time.	en_US
dc.identifier.isbn	4-900526-13-4	en_US
dc.identifier.journal	PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/19324
dc.identifier.wosnumber	WOS:000171608500167
dc.language.iso	en_US	en_US
dc.subject	Gallium nitride	en_US
dc.subject	three-photon excitation	en_US
dc.subject	second harmonic generation (SHG)	en_US
dc.subject	confocal microscopy	en_US
dc.title	Observation of second harmonic emission and three-photon fluorescence from Gallium-Nitride	en_US
dc.type	Proceedings Paper	en_US

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