METHOD FOR TREATING THE DISLOCATION IN A GAN-CONTAINING SEMICONDUCTOR LAYER
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20130102128 | zh_TW |
| dc.contributor.author | Lee Wei-I | en_US |
| dc.contributor.author | Yeh Yen-Hsien | en_US |
| dc.contributor.author | Wu Yin-Hao | en_US |
| dc.contributor.author | Yu Tzu-Yi | en_US |
| dc.date.accessioned | 2014-12-16T06:15:00Z | |
| dc.date.available | 2014-12-16T06:15:00Z | |
| dc.date.issued | 2013-04-25 | en_US |
| dc.description.abstract | A method for treating the threading dislocation within a GaN-containing semiconductor layer is provided. The method includes a substrate is provided. A GaN-containing semiconductor layer with the threading dislocation is formed on the substrate. An etching process with an etching gas is performed to remove the threading dislocation in the GaN-containing semiconductor layer so as to increase the efficiency for the light emitting device. | zh_TW |
| dc.identifier.govdoc | H01L021/20 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105057 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | METHOD FOR TREATING THE DISLOCATION IN A GAN-CONTAINING SEMICONDUCTOR LAYER | zh_TW |
| dc.type | Patents | en_US |