Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors
| dc.citation.epage | 196 | en_US |
| dc.citation.spage | 193 | en_US |
| dc.contributor.author | Huang, SY | en_US |
| dc.contributor.author | Chen, KM | en_US |
| dc.contributor.author | Huang, GW | en_US |
| dc.contributor.author | Hsu, TL | en_US |
| dc.contributor.author | Tseng, HC | en_US |
| dc.contributor.author | Chang, CY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:25:51Z | |
| dc.date.available | 2014-12-08T15:25:51Z | |
| dc.date.issued | 2004 | en_US |
| dc.description.abstract | Hot-carrier (HC) effects on high-frequency and RF power characteristics of Si/SiGe HBTs were investigated in this paper. We found that the small-signal current gain, output power, and power gain of Si/SiGe HBTs are suffered by the HC stress. With different bias conditions, the degradations of cutoff frequency and output power were found to be worse under constant base-current measurement than that under constant collector-current measurement. These phenomena have been explained by the change of the current gain, transconductance, and base-emitter resistance under stress. | en_US |
| dc.identifier.isbn | 0-7803-8454-7 | en_US |
| dc.identifier.journal | IPFA 2004: PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/18276 | |
| dc.identifier.wosnumber | WOS:000224428800047 | |
| dc.language.iso | en_US | en_US |
| dc.title | Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors | en_US |
| dc.type | Proceedings Paper | en_US |
Files
License bundle
1 - 1 of 1
Loading...
- Name:
- license.txt
- Size:
- 1.71 KB
- Format:
- Item-specific license agreed to upon submission
- Description: