應用於物聯網與互補式金氧半電路之低寄生電阻/電容元件技術開發
| dc.contributor.author | 林鴻志 | zh_TW |
| dc.contributor.department | 國立交通大學電子工程學系及電子研究所 | zh_TW |
| dc.date.accessioned | 2016-12-20T03:56:48Z | |
| dc.date.available | 2016-12-20T03:56:48Z | |
| dc.date.issued | 2016 | en_US |
| dc.description.abstract | zh_TW | |
| dc.description.abstract | en_US | |
| dc.description.sponsorship | 科技部 | zh_TW |
| dc.identifier.govdoc | MOST105-2221-E009-144-MY3 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=11889853&docId=488344 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/131877 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | zh_TW | |
| dc.subject | en_US | |
| dc.title | 應用於物聯網與互補式金氧半電路之低寄生電阻/電容元件技術開發 | zh_TW |
| dc.title | Development of Device Technologies with Reduced Parasitic Resistance/Capacitance for Iot and Cmos Applications. | en_US |
| dc.type | Plan | en_US |
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