Improved Reliability of GaN HEMTs Using N-2 Plasma Surface Treatment

dc.citation.epage	415	en_US
dc.citation.spage	413	en_US
dc.citation.woscount	0	en_US
dc.contributor.author	Liu, S. C.	en_US
dc.contributor.author	Dai, G. M.	en_US
dc.contributor.author	Chang, E. Y.	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.date.accessioned	2017-04-21T06:49:50Z
dc.date.available	2017-04-21T06:49:50Z
dc.date.issued	2015	en_US
dc.description.abstract	In this work, we present a systematic study on AlGaN surface treatment by N-2 plasma treatment prior to SiN deposition to enhance the reliability of the AlGaN/GaN MIS-HEMT. N-2 plasma treatment can effective remove surface impurities and discharge at the GaN surface, thus improving the SiN/GaN interface quality. With this technique, the GaN MIS-HEMT exhibits excellent reliability after high-gate-bias stress, high-drain-bias stress, and continuously long-term switching.	en_US
dc.identifier.isbn	978-1-4799-9928-6	en_US
dc.identifier.issn	1946-1550	en_US
dc.identifier.journal	PROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015)	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/136110
dc.identifier.wosnumber	WOS:000380466200105	en_US
dc.language.iso	en_US	en_US
dc.title	Improved Reliability of GaN HEMTs Using N-2 Plasma Surface Treatment	en_US
dc.type	Proceedings Paper	en_US

Files

Now showing 1 - 1 of 1