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有機與氧化物半導體之垂直載子遷移率及高效能金屬基極電晶體---子計畫三---具高垂直載子遷移率共軛高分子之合成(I)

dc.contributor.author許千樹en_US
dc.contributor.authorHSU CHAIN-SHUen_US
dc.contributor.department國立交通大學應用化學系(所)zh_TW
dc.date.accessioned2014-12-13T10:51:06Z
dc.date.available2014-12-13T10:51:06Z
dc.date.issued2008en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC97-2628-M009-015zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=1684174&docId=290204en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/102529
dc.language.isozh_TWen_US
dc.title有機與氧化物半導體之垂直載子遷移率及高效能金屬基極電晶體---子計畫三---具高垂直載子遷移率共軛高分子之合成(I)zh_TW
dc.titleVertical Carrier Mobility of Organic and Oxide Semiconductors and High-Performance Metal-Base Transistor (I)en_US
dc.typePlanen_US

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