Formation of semiconductor quantum rings using GaAs/AlAs partially capped layers
| dc.citation.epage | 850 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 848 | en_US |
| dc.citation.volume | 15 | en_US |
| dc.citation.woscount | 13 | |
| dc.contributor.author | Lee, BC | en_US |
| dc.contributor.author | Lee, CP | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:38:53Z | |
| dc.date.available | 2014-12-08T15:38:53Z | |
| dc.date.issued | 2004-07-01 | en_US |
| dc.description.abstract | A new method for fabricating semiconductor quantum rings has been developed. Instead of using the conventional GaAs cap layer, we used the GaAs/AlAs cap layer for the ring formation. The additional AlAs layer impedes the inward diffusion of the Ga and Al atoms and results in nicely formed ring structures with a more relaxed growth condition. Because of this layer, the ring-shaped structure can be maintained with a higher annealing temperature without being washed out by the intermixing of Ga/Al with In in the central region of the dots. The shape and the strain distribution of quantum rings have also been characterized by transmission electron microscopy. | en_US |
| dc.identifier.doi | 10.1088/0957-4484/15/7/024 | en_US |
| dc.identifier.issn | 0957-4484 | en_US |
| dc.identifier.journal | NANOTECHNOLOGY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1088/0957-4484/15/7/024 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/26631 | |
| dc.identifier.wosnumber | WOS:000223025900033 | |
| dc.language.iso | en_US | en_US |
| dc.title | Formation of semiconductor quantum rings using GaAs/AlAs partially capped layers | en_US |
| dc.type | Article | en_US |